Reactive ion etching of GaN using WI3
نویسنده
چکیده
Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pressure of 10 mTorr, and flow rate of 40 seem. Auger electron spectroscopy (AES) was used to investigate the surface of GaN films after etching. Oxygen contamination has been detected from the AES profiles of etched GaN samples.
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